Femtosecond Burst pulses influence to the internal modifications and chemical etching in the fused silicaWednesday (24.06.2020) 09:00 - 09:20 Room 1
We show that due the two pulses burst regime the different volume modifications morphology is observed. While for the single pulse and appropriate processing speed and pulse energy, the type I modifications are observed, with the burst regime and same laser pulse energy the nanogratings are already formed. This phenomenon partly is related with the fact that two time more pulses comes to the material, however it cannot be equated with the 1MHz pulse train in single pulse regime. In two pulses burst regime the processing window where type I modifications are formed is significantly reduced due effect caused by increased number of the pulses and reduced interpulse temporal distance. The modification axial length increases by 37 % when the pulse regime is changed from the single pulse to the two pulses burst at 5 mm/s scan speed. The modification lateral size increases even more up to 60% when the pulse regime is changed. The influence of the absorption and thermal accumulation to the modification size increase and chemical etching rate will be discussed.
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